Fabrikant onderdeelnummer : | SI3588DV-T1-E3 | RoHs-status : | Loodvrij / RoHS-conform |
---|---|---|---|
Fabrikant / Merk : | Electro-Films (EFI) / Vishay | Voorraad conditie : | 5735 pcs Stock |
Beschrijving : | MOSFET N/P-CH 20V 2.5A 6TSOP | Verschepen van : | Hong Kong |
Datasheets : | SI3588DV-T1-E3.pdf | Zending manier : | DHL/Fedex/TNT/UPS/EMS |
Artikelnummer | SI3588DV-T1-E3 |
---|---|
Fabrikant | Electro-Films (EFI) / Vishay |
Beschrijving | MOSFET N/P-CH 20V 2.5A 6TSOP |
Leid Free Status / RoHS Status | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 5735 pcs |
Datasheets | SI3588DV-T1-E3.pdf |
VGS (th) (Max) @ Id | 450mV @ 250µA (Min) |
Leverancier Device Pakket | 6-TSOP |
Serie | TrenchFET® |
Rds On (Max) @ Id, VGS | 80 mOhm @ 3A, 4.5V |
Vermogen - Max | 830mW, 83mW |
Packaging | Cut Tape (CT) |
Verpakking / doos | SOT-23-6 Thin, TSOT-23-6 |
Andere namen | SI3588DV-T1-E3CT |
Temperatuur | -55°C ~ 150°C (TJ) |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain naar de Bron Voltage (Vdss) | 20V |
gedetailleerde beschrijving | Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW, 83mW Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C | 2.5A, 570mA |
Base Part Number | SI3588 |
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