Fabrikant onderdeelnummer : | SI4913DY-T1-GE3 |
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RoHs-status : | Loodvrij / RoHS-conform |
Fabrikant / Merk : | Electro-Films (EFI) / Vishay |
Voorraad conditie : | 5970 pcs Stock |
Beschrijving : | MOSFET 2P-CH 20V 7.1A 8-SOIC |
Verschepen van : | Hong Kong |
Datasheets : | SI4913DY-T1-GE3.pdf |
Zending manier : | DHL/Fedex/TNT/UPS/EMS |
Artikelnummer | SI4913DY-T1-GE3 |
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Fabrikant | Electro-Films (EFI) / Vishay |
Beschrijving | MOSFET 2P-CH 20V 7.1A 8-SOIC |
Leid Free Status / RoHS Status | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 5970 pcs |
Datasheets | SI4913DY-T1-GE3.pdf |
VGS (th) (Max) @ Id | 1V @ 500µA |
Leverancier Device Pakket | 8-SO |
Serie | TrenchFET® |
Rds On (Max) @ Id, VGS | 15 mOhm @ 9.4A, 4.5V |
Vermogen - Max | 1.1W |
Packaging | Cut Tape (CT) |
Verpakking / doos | 8-SOIC (0.154", 3.90mm Width) |
Andere namen | SI4913DY-T1-GE3CT |
Temperatuur | -55°C ~ 150°C (TJ) |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain naar de Bron Voltage (Vdss) | 20V |
gedetailleerde beschrijving | Mosfet Array 2 P-Channel (Dual) 20V 7.1A 1.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C | 7.1A |
Base Part Number | SI4913 |
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